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| SUR50N03-06P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V ID (A)b 84b 59b D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Converters - Desktop CPU Core D Synchronous Rectifiers TO-252 Reverse Lead DPAK D Drain Connected to Tab G D S G Top View Ordering Information: SUR50N03-06P--E3 SUR50N03-06P-T4--E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TA = 25_C Continuous Drain Current TC = 25_C TC = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C IDM IS PD TJ, Tstg ID Symbol VDS VGS Limit 30 "20 27 84b 59b 100 25 88 8.3a -55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable junction temperature, package limitation current is 50 A. Document Number: 72182 S-32693--Rev. A, 19-Jan-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 1.4 Maximum 18 50 1.7 Unit _C/W C/W 1 SUR50N03-06P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 20 0.0078 50 0.0053 0.0065 0.0105 0.0095 S W 30 1.0 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W VDS = 15 V, VGS = 4.5 V, ID = 50 A 1 VGS = 0 V, VDS = 25 V, f = 1 MHz 3100 565 255 1.9 21 10 7.5 12 12 30 10 20 20 45 15 ns 3.1 30 nC W p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 100 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 6 V 160 I D - Drain Current (A) 5V I D - Drain Current (A) 80 100 Transfer Characteristics 120 60 80 4V 40 TC = 125_C 20 25_C -55_C 0 40 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72182 S-32693--Rev. A, 19-Jan-04 2 SUR50N03-06P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 120 100 g fs - Transconductance (S) 80 60 40 20 0 0 10 20 30 40 50 125_C TC = -55_C 25_C r DS(on)- On-Resistance ( W ) 0.0150 0.0125 0.0100 VGS = 4.5 V 0.0075 VGS = 10 V 0.0050 0.0025 0.0000 0 20 40 60 80 100 Vishay Siliconix On-Resistance vs. Drain Current ID - Drain Current (A) 4000 3500 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss ID - Drain Current (A) 10 VDS = 15 V ID = 50 A Capacitance Ciss V GS - Gate-to-Source Voltage (V) Gate Charge 8 C - Capacitance (pF) 6 4 2 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) 2.0 On-Resistance vs. Junction Temperature VGS = 10 V ID = 20 A 100 Source-Drain Diode Forward Voltage r DS(on)- On-Resistance ( W ) (Normalized) I S - Source Current (A) 1.5 TJ = 150_C 10 1.0 TJ = 25_C 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72182 S-32693--Rev. A, 19-Jan-04 www.vishay.com 3 SUR50N03-06P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 30 New Product 1000 Limited by rDS(on) 100 I D - Drain Current (A) Safe Operating Area 24 I D - Drain Current (A) 10, 100 ms 18 10 1 ms 10 ms 100 ms 1s 10 s TA = 25_C Single Pulse 100 s dc 12 1 6 0.1 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72182 S-32693--Rev. A, 19-Jan-04 |
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